Single atom vacancy engineering with highly reversible N4 sites enable ultra-low overpotential for durable zinc-ion supercapacitors
Single atom vacancy engineering with highly reversible N4 sites enable ultra-low overpotential for durable zinc-ion supercapacitors
研究概述
研究内容请参见论文原文。
谱图与表征信息
Fig. 3. Characterizations of Zn SAMs. (a–c) TEM images of SA-Zn/CN-0.5, SA-Zn/CN-1 and SA-Zn/CN-3, respectively. (d–f) AC-HAADF-STEM images of SA-Zn/CN- 0.5, SA-Zn/CN-1 and SA-Zn/CN-3, respectively. the single atom Zn sites are marked with red cycles. (g) Zn K-edge XANES and FT-EXAFS spectra of Zn SAMs with Zn foil and ZIF-8 as the references.