RESEARCH / A0503
Single atom vacancy engineering with highly reversible N4 sites enable ultra-low overpotential for durable zinc-ion supercapacitors
Read the original paper · 10.1016/j.ensm.2024.103189 ↗
Source figures may contain other techniques and soft X-ray spectra. C, N and O measurements are outside our current hard-XAFS testing range.
Fig. 3. Characterizations of Zn SAMs. (a–c) TEM images of SA-Zn/CN-0.5, SA-Zn/CN-1 and SA-Zn/CN-3, respectively. (d–f) AC-HAADF-STEM images of SA-Zn/CN- 0.5, SA-Zn/CN-1 and SA-Zn/CN-3, respectively. the single atom Zn sites are marked with red cycles. (g) Zn K-edge XANES and FT-EXAFS spectra of Zn SAMs with Zn foil and ZIF-8 as the references.